Atomic Layer Deposition of Al2O3, TiO2 and ZnO Films into High Aspect Ratio Pores

Author

Sirviö, S. ; Sainiemi, L. ; Franssila, S. ; Grigoras, K.

Author_Institution

Helsinki Univ. of Technol., Helsinki

fYear

2007

fDate

10-14 June 2007

Firstpage

521

Lastpage

524

Abstract

Atomic layer deposition (ALD) of aluminium, zinc and titanium oxides into high aspect ratio electrochemically etched pores is described. Macroporous silicon was fabricated by electrochemical etching. Aspect ratios of 50:1 were routinely obtained. commercial anodisc alumina pores were used for reference. ALD thin films Al₂O₃, TiO₂ and ZnO were deposited in the pores. The results were studied with scanning electron microscope (SEM). The layer thicknesses were close to the theoretical value calculated from the cycle number, indicating excellent conformality in high aspect ratio structures.

Keywords

II-VI semiconductors; alumina; atomic layer deposition; electrochemistry; elemental semiconductors; etching; porous semiconductors; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; titanium compounds; wide band gap semiconductors; zinc compounds; Al₂O₃; SEM; Si; TiO₂; ZnO; aluminium oxides; anodisc alumina pores; atomic layer deposition; electrochemical etching; high-aspect ratio pores; macroporous silicon; scanning electron microscope; titanium oxides; zinc oxides; Aluminum oxide; Atomic layer deposition; Biological materials; Coatings; Hafnium; Scanning electron microscopy; Silicon; Titanium; Wet etching; Zinc oxide; ALD; aluminium oxide; anodic alumina; micropores; nanopores; porous silicon; titanium dioxide; zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300182

Filename

4300182