Title :
InP/InGaAs DHBT parallel feedback amplifier with 14-dB gain and 91-GHz bandwidth
Author :
Fukuyama, Hiroyuki ; Sano, Kimikazu ; Ida, Minoru ; Kurishima, Kenji ; Murata, Koichi ; Ishii, Kiyoshi ; Enoki, Takatomo ; Sugahara, Hirohiko
Author_Institution :
NTT Photonics Lab., NTT Corp., Kanagawa, Japan
fDate :
31 May-4 June 2004
Abstract :
We have developed a parallel feedback amplifier using our state-of-the-art InP/InGaAs double heterojunction bipolar transistor (DHBT) IC technology. The gain and bandwidth of the amplifier are 14 dB and 91 GHz, respectively, which are large enough for use in 100-Gbit/s applications. Input and output return characteristics at 70 GHz are less than -9 and -11 dB, respectively. Isolation is better than -33 dB below 100 GHz. We also observed an output eye diagram for 100-Gbit/s electrical signal input. Good eye openings were obtained. To the best of our knowledge, the bandwidth is the highest value to date for baseband parallel feedback amplifiers, and this work is the first demonstration of an electrical amplifier for 100-Gbit/s data signals.
Keywords :
III-V semiconductors; bipolar integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 100 Gbit/s; 14 dB; 70 GHz; 91 GHz; DHBT parallel feedback amplifier; InP-InGaAs; amplifier bandwidth; amplifier gain; double heterojunction bipolar transistor IC technology; electrical amplifier; Bandwidth; Broadband amplifiers; Capacitance; Circuits; DH-HEMTs; Feedback amplifiers; Indium gallium arsenide; Indium phosphide; Isolation technology; Optical amplifiers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442812
