Wide bandwidth InP DHBT technology utilizing dielectric sidewall spacers

Author

Urteaga, M. ; Pierson, R. ; Rowell, P. ; Brar, B. ; Griffith, Z. ; Dahlström, M. ; Rodwell, M.J.W. ; Lee, S. ; Nguyen, N. ; Nguyen, C.

Author_Institution

Rockwell Sci. Co., Thousand Oaks, CA, USA

fYear

2004

fDate

31 May-4 June 2004

Firstpage

667

Lastpage

670

Abstract

We report device results from a wide bandwidth InP mesa-DHBT technology. In an effort to improve the manufacturability of submicron devices, the self-aligned base emitter junction is formed using dielectric sidewall spacers and a refractory base metal stack. Device performance has been optimized for high-speed digital and mixed-signal circuit applications. An HBT with emitter junctions dimensions of 0.7 × 3.0 μm² exhibited peak f_τ and f_max values of 292 GHz, and 314 GHz, respectively, at J_E = 6 mA/μm² and V_CB = 0.4 V. Importantly for digital logic circuits, the device had a low collector-base capacitance (C_cb = 6.4 fF) resulting in a low collector-base capacitance to collector current ratio (C_cb/Ic ∼ 0.5 psec/V).

Keywords

III-V semiconductors; capacitance; heterojunction bipolar transistors; indium compounds; 0.4 V; 292 GHz; 314 GHz; 6.4 fF; DHBT; InP; collector current ratio; collector-base capacitance; dielectric sidewall spacers; double heterojunction bipolar transistors; high-speed digital circuit applications; mixed-signal circuit applications; refractory base metal stack; self-aligned base emitter junction; Bandwidth; Capacitance; DH-HEMTs; Dielectric devices; Digital integrated circuits; Heterojunction bipolar transistors; Indium phosphide; Logic circuits; Manufacturing; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442814

Filename

1442814