Title :
Millimeter and submillimeter oscillators using resonant tunneling diodes with stacked-layer slot antennas
Author :
Orihashi, N. ; Hattori, S. ; Asada, M.
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
fDate :
31 May-4 June 2004
Abstract :
We proposed a resonant tunneling diode (RTD) oscillator with a stacked-layer slot antenna toward the terahertz range, and demonstrated 254 GHz oscillation with GaInAs/AlInAs RTD. Theoretical analysis for oscillation frequency of the fabricated device was in reasonable agreement with the measurement. Higher oscillation frequency is expected by reducing the slot length.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave oscillators; resonant tunnelling diodes; slot antennas; submillimetre wave oscillators; 254 GHz; GaInAs-AlInAs; millimeter oscillators; oscillation frequency; resonant tunneling diodes; stacked-layer slot antennas; submillimeter oscillators; Diodes; Electrodes; Frequency; Oscillators; Quantum cascade lasers; Refractive index; Resonant tunneling devices; Slot antennas; Submillimeter wave technology; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442815
