Title :
Wavelength elongation of MBE grown (Ga)InAs QDs by GaInAsSb cover layer
Author :
Matsuura, Tetsuya ; Miyamoto, Tomoyuki ; Ohta, Masataka ; Matsui, Yasutaka ; Furuhata, Tatsuya ; Koyama, Fumio
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Japan
fDate :
31 May-4 June 2004
Abstract :
We demonstrated the elongation of the photoluminescence (PL) wavelength of (Ga)InAs quantum dots (QDs) using a highly strained GaInAsSb cover layer for the first time. The effect of the GaInAsSb cover layer on the optical properties of (Ga)InAs self-organized QDs was investigated for various indium (In) compositions in dots and cover layers. The emission wavelength of (Ga)InAs QDs was elongated by increasing the In composition of the GaInAsSb cover layer up to 1.38 μm for GaInAs QDs and up to 1.48 μm for InAs QDs while maintaining the emission efficiency. The result would be promising for QD lasers on a GaAs for use in long-wavelength fiber optical communications.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; GaInAs; GaInAsSb; MBE; cover layer; emission efficiency; indium compositions; long-wavelength fiber optical communications; photoluminescence; quantum dots; wavelength elongation; Capacitive sensors; Gallium arsenide; Indium; Optical refraction; Optical surface waves; Photoluminescence; Quantum dot lasers; Quantum dots; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442818
