A new algorithm for NMOS AC hot-carrier lifetime prediction based on the dominant degradation asymptote

This study presents a new algorithm for improved prediction of AC hot-carrier lifetime. It is based on identifying and projecting the dominant degradation asymptote and accounts for the stress-bias-dependent degradation rate n, and the non-linearity of the degradation time-dependence. Detailed model parameter extraction and lifetime prediction procedures are explained, and applications of the new algorithm demonstrated. Significant differences in the predicted AC-lifetimes are found between the existing and the new algorithms over a wide range of CMOS inverter designs.