1.55 μm VCSELs with InP/air-gap distributed Bragg reflectors

Author

Strassner, M. ; Regreny, P. ; Bouchoule, S. ; Chitica, N. ; Saint-Girons, G. ; Sagnes, I. ; Jacquet, J. ; Leclercq, J.-L.

Author_Institution

Inst. for Microelectron. & Inf. Technol., Royal Inst. of Technol., Kista, Sweden

fYear

2004

fDate

31 May-4 June 2004

Firstpage

700

Lastpage

703

Abstract

The presented VCSELs demonstrate the possibility of fabricating cavities with extremely large Q-factors by using InP/air-gap DBRs. At the same time, the deployed technologies permits to fabricate potentially tunable VCSELs. Photo-pumped and electrically pumped VCSELs and their tunability when working as resonant cavity light emitting diodes are presented. Output powers of up to 110 μW at room temperature and a maximum wavelength tuning of 22 nm have been achieved.

Keywords

Q-factor; distributed Bragg reflectors; integrated optics; integrated optoelectronics; laser cavity resonators; laser transitions; laser tuning; light emitting diodes; optical fabrication; optical pumping; surface emitting lasers; 1.55 mum; 22 nm; DBR; Q-factors; distributed Bragg reflectors; electrically pumped VCSEL; photopumped VCSEL; resonant cavity light emitting diodes; tunable VCSEL; Air gaps; Biomembranes; Contacts; Distributed Bragg reflectors; Indium gallium arsenide; Indium phosphide; Laser tuning; Mirrors; Tunable circuits and devices; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442822

Filename

1442822