Electrical and charge trapping properties of HfO2/Al2O3 bilayer gate dielectrics on In0.53Ga0.47As substrates

Author

Ghosh, A.K. ; Das, T. ; Mukherjee, C. ; Bandyopadhyay, A.S. ; Dalapati, G.K. ; Chi, D. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

4

Abstract

Electrical properties and reliability of bilayer HfO₂ (~7nm)/Al₂O₃ (~3nm) high-k dielectric films prepared by RF sputtering have been studied in detail. It is observed that the bilayer dielectric reduces the frequency dispersion, hysteresis, interface trap charge density (D_it) and gate leakage current density when compared to single layer HfO₂. In order to study the degradation mechanisms in Al/HfO₂/Al₂O₃/p-In_0.53Ga_0.47As and Al/HfO₂/p-In_0.53Ga_0.47As structures as a function of different stress conditions, trapped charge distribution were determined after constant voltage stressing at different bias levels. HfO₂/Al₂O₃ gate stacks exhibited superior electrical performance in terms of trap induced flatband voltage instability and trap charge generation compared to directly deposited HfO₂ films on p-In_0.53Ga_0.47As.

Keywords

III-V semiconductors; III-VI semiconductors; aluminium compounds; dielectric materials; hafnium compounds; indium compounds; HfO₂-Al₂O₃; In_0.53Ga_0.47As; RF sputtering; bilayer gate dielectrics; charge trapping property; electrical property; flatband voltage instability; frequency dispersion; gate leakage current density; high-k dielectric films; hysteresis; interface trap charge density; trap charge generation; voltage stressing; Aluminum oxide; Dielectrics; Electron traps; Hafnium compounds; Logic gates; Substrates; Al2O3; HfO2; In0.53Ga0.47As; charge trapping; high-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306299

Filename

6306299