Title :
A new purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
Author :
Leang, S.E. ; Chan, D.S.H. ; Chim, W.K.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
fDate :
April 30 1996-May 2 1996
Abstract :
A new charge-pumping technique to extract the spatial distribution of hot-carrier-induced interface states and trapped charges in MOS devices is proposed. This method is purely experimental and does not require simulation, and therefore can be applied to any MOSFET without the detailed knowledge of the device´s structure. With this method, one is able to gain a better understanding of the degradation mechanisms taking place during hot-carrier stress.
Keywords :
MOSFET; electron traps; hot carriers; interface states; semiconductor device testing; MOS devices; MOSFETs; charge-pumping technique; degradation mechanisms; hot-carrier stress; hot-carrier-induced interface states; spatial distribution extraction; trapped charges; Charge carrier processes; Charge pumps; Degradation; Doping; Failure analysis; Hot carriers; Interface states; MOSFET circuits; Stress; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492136
