DocumentCode :
337349
Title :
Quantizing of transition radiation of the surface polaritons by the charge, intersecting two-layer two-dimensional electron system, placed into strong magnetic field
Author :
Averkov, Yu O. ; Beletskii, N.N. ; Yakovenko, V.M.
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Volume :
1
fYear :
1998
fDate :
1998
Firstpage :
289
Abstract :
The transition radiation of surface polaritons, which appears when the charge is moving through a homogeneous isotropic medium with dielectric constant ε, into which a two-layer 2D electron system (2DES), placed in a transverse quantizing magnetic field, is implanted, is theoretically investigated. The two layer 2DES consists of two GaAs infinitely deep quantum wells separated by an AlGaAs potential barrier of finite width and height. The quantizing magnetic field and the direction of the charge movement are perpendicular to the 2DES. The energy spectrum of the electrons in such a system is fully discrete, and this leads to stepwise dependencies of Landau level filling factor and Hall conductivity of the two-layer 2DES on on the magnetic field
Keywords :
III-V semiconductors; Landau levels; aluminium compounds; gallium arsenide; polaritons; quantum Hall effect; semiconductor quantum wells; transition radiation; two-dimensional electron gas; AlGaAs potential barrier; GaAs-AlGaAs; Hall conductivity; Landau level filling factor; deep quantum wells; homogeneous isotropic medium; strong magnetic field; surface polaritons; transition radiation; transverse quantizing magnetic field; two-layer 2D electron system; Conductivity; Cyclotrons; Dielectric constant; Electrons; Equations; Filling; Frequency; Gallium arsenide; Magnetic fields; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location :
Kharkov
Print_ISBN :
0-7803-5553-9
Type :
conf
DOI :
10.1109/MSMW.1998.758984
Filename :
758984
Link To Document :
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