DocumentCode
3373528
Title
Studies on Lattice vibration, impurity and defects in MIS structures using Hf-based dielectrics on Si and SiGe substrates
Author
Mukherjee, C. ; Mallik, S. ; Hota, M.K. ; Das, T. ; Maiti, C.K.
Author_Institution
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.
Keywords
MIS structures; dielectric materials; lattice dynamics; tunnelling spectroscopy; vibrational states; Hf-based dielectrics; MIS structures; Si; Si substrates; SiGe; SiGe substrates; defects; impurity; inelastic tunneling spectroscopy; lattice dynamics; lattice vibration; molecular vibrations; phonons; strained-SiGe layers; trap-features; ultra-thin Hf-based gate dielectrics; Dielectrics; Logic gates; Phonons; Silicon; Substrates; Tunneling; Vibrations;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306303
Filename
6306303
Link To Document