DocumentCode
3373571
Title
Highly reliable 1.3-μm InGaAlAs buried heterostructure laser diode for 10 GbE
Author
Sato, Hiroshi ; Tsuchiya, Tomonobu ; Kitatani, Takeshi ; Takahashi, Nontsugu ; Oouchi, Kiyoshi ; Nakahara, Koji ; Aoki, Masahiro
Author_Institution
Central Res. Lab, Hitachi Ltd., Tokyo, Japan
fYear
2004
fDate
31 May-4 June 2004
Firstpage
731
Lastpage
733
Abstract
We fabricated an in-situ-cleaned and regrown 1.3-μm InGaAlAs buried heterostructure laser. The average degradation of its driving current was about 1% after a 3000-hour aging test. This result offers the logical conclusion that in-situ cleaning is a promising means of fabricating highly reliable, high-performance InGaAlAs BH lasers.
Keywords
III-V semiconductors; ageing; aluminium compounds; cleaning; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical fabrication; semiconductor lasers; 1.3 mum; 3000 hour; BH lasers; InGaAlAs; aging test; buried heterostructure laser diode; driving current degradation; in-situ cleaning; Cleaning; Degradation; Diode lasers; Epitaxial growth; Etching; Quantum well devices; Semiconductor lasers; Temperature; Testing; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442829
Filename
1442829
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