• DocumentCode
    3373599
  • Title

    An interconnect-aware Dynamic Voltage Scaling scheme for DSM VLSI

  • Author

    Zarrabi, Houman ; Al-Khalili, A.J. ; Savaria, Yvon

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Concordia Univ., Montréal, QC, Canada
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    Dynamic Voltage Scaling (DVS) is a successful design solution that addresses the challenges associated with low-power/energy and high-performance design in Deep Sub Micron (DSM) CMOS. In DSM, VLSI systems have become interconnect-centric; correspondingly, the associated design solutions should be adapted to preserve their functionality. In reference to this concern, and with respect to DVS, we propose a DVS scheme that takes interconnect effects into account. The proposed DVS scheme is a generalization of existing methods that treat systems as pure logic. To support this DVS scheme, two design metrics are introduced. These metrics model the performance of system components subject to DVS, based on the proportion of their delay due to interconnects. Based on the proposed design metrics, a compact delay model and a method for supply voltage selection are proposed. The limit of scaling for hazard-free system operation in VLSI systems is further formulated. It is shown that this limit can be smaller than the one dictated by the process technology. The proposed DVS scheme is applied to a 4-section global clock distribution network. Reported results show that this scheme improves both the timing accuracy and energy consumption aspects of DVS by 25% and 30% on average, respectively.
  • Keywords
    CMOS integrated circuits; VLSI; interconnections; low-power electronics; 4-section global clock distribution network; DSM VLSI; deep sub micron CMOS; interconnect-aware dynamic voltage scaling scheme; supply voltage selection; Batteries; CMOS logic circuits; Clocks; Delay; Dynamic voltage scaling; Power system interconnection; Power system modeling; Semiconductor device modeling; Very large scale integration; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537106
  • Filename
    5537106