Ruthenium-doped InP buried 1.3-μm DFB lasers on a p-type substrate

Author

Iga, Ryuzo ; Kondo, Yasuhiro ; Kishi, Kenji ; Saitoh, Tadashi

Author_Institution

NTT Photonics Lab., NTT Corp., Kanagawa, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

742

Lastpage

745

Abstract

We have fabricated 1.3-μm InGaAsP DFB lasers with a simple buried structure using Ru-doped semi-insulating InP on a p-InP substrate for the first time. SIMS measurements revealed that the Ru-doped InP decreased Zn diffusion from the p-InP substrate in comparison with Fe-doped InP. The Ru-InP buried lasers showed good L-I characteristics and small-signal responses in a temperature range of 25 to 95 °C. Clearly opened eyes for 10-Gb/s direct modulation of the Ru-InP buried lasers were obtained even at 85 °C.

Keywords

III-V semiconductors; diffusion; distributed feedback lasers; indium compounds; optical fabrication; optical modulation; ruthenium; secondary ion mass spectra; semiconductor lasers; 1.3 mum; 10 Gbit/s; 25 to 95 degC; 85 degC; InP; InP:Ru; L-I characteristics; SIMS measurements; diffusion; direct modulation; p-type substrate; ruthenium-doped buried DFB lasers; Ambient intelligence; High speed optical techniques; Indium phosphide; Iron; Optical device fabrication; Optical films; Reproducibility of results; Samarium; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442832

Filename

1442832