Title :
Low leakage current metamorphic InGaAs/InP DHBTs with fτ and fmax > 268 GHz on a GaAs substrate
Author :
Griffith, Z. ; Kim, Y.M. ; Dahlström, M. ; Gossard, A.C. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
31 May-4 June 2004
Abstract :
Metamorphic InP/In0.53Ga0.47/InP double heterojunction bipolar transistors (mHBT) were grown and fabricated. And fτ and fmax of 268 and 339 GHz were measured, respectively - both records for mHBTs. The DC current gain β is ≈ 35 and VBR,CEO = 5.7 V. The collector leakage current Icbo is 90 pA at Vcb = 0.3 V. A 70 nm SiO2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch and increase device yield. The metamorphic buffer layer is InP - employed because of its high thermal conductivity for minimum device thermal resistance.
Keywords :
III-V semiconductors; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; thermal conductivity; thermal resistance; 0.3 V; 268 GHz; 339 GHz; 5.7 V; 70 nm; 90 pA; DC current gain; GaAs; InP-In0.53Ga0.47As-InP; collector leakage current; dielectric sidewall; double heterojunction bipolar transistors; emitter contact; emitter wet etch; metamorphic DHBT; metamorphic buffer layer; thermal conductivity; thermal resistance; Buffer layers; Double heterojunction bipolar transistors; Etching; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Leakage current; Substrates; Thermal conductivity; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442834
