DocumentCode
3373749
Title
Low-Cost Highly-Robust Hardened Cells Using Blocking Feedback Transistors
Author
Nicolaidis, Michael ; Perez, Renaud ; Alexandrescu, Dan
Author_Institution
TIMA Lab., Grenoble
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
371
Lastpage
376
Abstract
CMOS nanometric technologies are increasingly sensitive to soft errors, including SEUs affecting storage cells and SETs initiated in the combinational logic, and eventually captured by some latches or flip- flops. SEUs affecting latches or flip-flops are by far the largest soft error rate (SER) contributor in logic. Thus, developing cost-efficient hardened storage cells to cope with SEUs in latches and flip-flops (but also in some memories difficult to protect by ECC ) is of increasing importance. This paper proposes a new principle for designing low-cost highly robust storage cells and several transistor level implementations.
Keywords
radiation hardening (electronics); semiconductor storage; blocking feedback transistors; hardened storage cells; highly-robust hardened cells; single event upsets; soft error rate; CMOS logic circuits; CMOS technology; Capacitance; Costs; Feedback; Flip-flops; Logic testing; Protection; Robustness; Single event transient; SEUs; radiation hardened cells; soft errors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium, 2008. VTS 2008. 26th IEEE
Conference_Location
San Diego, CA
ISSN
1093-0167
Print_ISBN
978-0-7695-3123-6
Type
conf
DOI
10.1109/VTS.2008.15
Filename
4511753
Link To Document