• DocumentCode
    3373749
  • Title

    Low-Cost Highly-Robust Hardened Cells Using Blocking Feedback Transistors

  • Author

    Nicolaidis, Michael ; Perez, Renaud ; Alexandrescu, Dan

  • Author_Institution
    TIMA Lab., Grenoble
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    371
  • Lastpage
    376
  • Abstract
    CMOS nanometric technologies are increasingly sensitive to soft errors, including SEUs affecting storage cells and SETs initiated in the combinational logic, and eventually captured by some latches or flip- flops. SEUs affecting latches or flip-flops are by far the largest soft error rate (SER) contributor in logic. Thus, developing cost-efficient hardened storage cells to cope with SEUs in latches and flip-flops (but also in some memories difficult to protect by ECC ) is of increasing importance. This paper proposes a new principle for designing low-cost highly robust storage cells and several transistor level implementations.
  • Keywords
    radiation hardening (electronics); semiconductor storage; blocking feedback transistors; hardened storage cells; highly-robust hardened cells; single event upsets; soft error rate; CMOS logic circuits; CMOS technology; Capacitance; Costs; Feedback; Flip-flops; Logic testing; Protection; Robustness; Single event transient; SEUs; radiation hardened cells; soft errors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium, 2008. VTS 2008. 26th IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1093-0167
  • Print_ISBN
    978-0-7695-3123-6
  • Type

    conf

  • DOI
    10.1109/VTS.2008.15
  • Filename
    4511753