Front-end wideband amplifiers with 4 GHz bandwidth realized in NT25 low-power bipolar technology

Author

Lee, W. ; Filanovsky, I.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada

fYear

1998

fDate

9-12 Aug 1998

Firstpage

130

Lastpage

133

Abstract

A low-power RF wideband amplifier is presented. It has a 26 dB gain, noise figures of 6.6 dB, -3 dB bandwidth of 3.9 GHz, and consumes 63 mW power with a 3 V power supply. The circuit is implemented using Si bipolar process, NT25, which has f_T of 25 GHz. Both input and output impedances are matched at 50 ohms. The primary purpose of this amplifier is to be used as the front-end amplifier in a portable commercial receiver with carrier frequencies from 1-2 GHz

Keywords

MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; impedance matching; integrated circuit layout; low-power electronics; radio receivers; silicon; wideband amplifiers; 1 to 2 GHz; 25 GHz; 26 dB; 3 V; 3.9 to 4 GHz; 6.6 dB; 63 mW; NT25 low-power bipolar technology; Si; Si bipolar process; front-end wideband amplifiers; low-power RF wideband amplifier; portable commercial receiver; Bandwidth; Broadband amplifiers; Circuits; Costs; Impedance matching; Noise figure; Radio frequency; Receivers; Signal processing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on

Conference_Location

Notre Dame, IN

Print_ISBN

0-8186-8914-5

Type

conf

DOI

10.1109/MWSCAS.1998.759453

Filename

759453