Title :
A Low-Loss Single-Pole-Double-Throw (SPDT) Switch Circuit
Author :
Tang, M. ; Liu, A.Q. ; Agarwal, Abhishek
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 mus and a switching-off time of 36 mus. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm times 1.3 mm.
Keywords :
coplanar waveguides; glass; microswitches; silicon-on-insulator; coplanar waveguide configuration; frequency 20 GHz; lateral RF MEMS switches; low-loss SPDT switch circuit; single-mask silicon-on-glass fabrication; single-pole-double-throw switch circuit; time 35 mus; time 36 mus; Coplanar waveguides; Electrodes; Etching; Glass; Radiofrequency microelectromechanical systems; Silicon; Structural beams; Switches; Switching circuits; Voltage; RF MEMS; SPDT; low loss; silicon-on-glass;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
DOI :
10.1109/SENSOR.2007.4300221
