DocumentCode :
3373918
Title :
Metallization proximity studies for copper spiral inductors on silicon
Author :
Sia, C.B. ; Yeo, K.S. ; Chu, Shao-Fu ; Zeng, Z. ; Lee, T.H.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore, Singapore
fYear :
2002
fDate :
8-11 April 2002
Firstpage :
25
Lastpage :
29
Abstract :
The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption trade-off with respect to its core diameter is evaluated qualitatively for the first time. Effects of the inductor´s proximate grounded metallization on its overall inductive performance are also analyzed.
Keywords :
copper; inductors; metallisation; Cu; Si; copper spiral inductor; metallization proximity; silicon substrate; Conductors; Copper; Costs; Inductance; Inductors; Metallization; Q factor; Silicon; Spirals; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
Type :
conf
DOI :
10.1109/ICMTS.2002.1193165
Filename :
1193165
Link To Document :
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