DocumentCode :
3373924
Title :
Extraction method for substrate resistance of RF MOSFETs
Author :
Han, Jeonghu ; Je, Minkyu ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, South Korea
fYear :
2002
fDate :
8-11 April 2002
Firstpage :
37
Lastpage :
40
Abstract :
This paper proposes a simple and accurate method for extracting substrate resistance of an RF MOSFET from the measured network parameters. The extraction results for 0.18-μm MOSFETs are presented for various bias conditions and devices with different geometries.
Keywords :
MOSFET; 0.18 micron; RF MOSFET; parameter extraction; substrate resistance; Capacitance; Electrical resistance measurement; Electronic mail; Equations; Equivalent circuits; Geometry; MOSFETs; Radio frequency; Scattering parameters; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
Type :
conf
DOI :
10.1109/ICMTS.2002.1193167
Filename :
1193167
Link To Document :
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