Test structure for precise statistical characteristics measurement of MOSFETs

Author

Shimizu, Yoshiyuki ; Nakamura, Mitsuo ; Matsuoka, Toshimasa ; Taniguchi, Kenji

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

2002

fDate

8-11 April 2002

Firstpage

49

Lastpage

54

Abstract

A new test structure consisting of an MOSFET array and peripheral decoder circuits is proposed to study statistical variation (mismatch) in MOSFETs´ characteristics. Kelvin technique was implemented in the structure to cancel parasitic resistance of metal wiring and transmission gates in such a way that any MOSFET in the array can be measured at the same bias condition. Accurate electrical measurements using the structure makes it possible to derive statistical variation of threshold voltage and transconductance of MOSFETs placed in small area.

Keywords

MOSFET; arrays; characteristics measurement; semiconductor device measurement; semiconductor device testing; voltage measurement; Kelvin technique; MOSFET array; MOSFET statistical characteristics measurement; bias condition; electrical measurements; metal wiring; parasitic resistance; peripheral decoder circuits; test structure; threshold voltage; transconductance; transmission gates; Area measurement; Circuit testing; Decoding; Electric resistance; Electric variables measurement; Electrical resistance measurement; Kelvin; MOSFETs; Threshold voltage; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on

Print_ISBN

0-7803-7464-9

Type

conf

DOI

10.1109/ICMTS.2002.1193170

Filename

1193170