DocumentCode
3374057
Title
Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors
Author
Nenadovic, N. ; Nanver, L.K. ; Schellevis, H. ; de Mooij, D. ; Zieren, V. ; Slotboom, J.W.
Author_Institution
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fYear
2002
fDate
8-11 April 2002
Firstpage
77
Lastpage
82
Abstract
A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.
Keywords
bipolar transistors; finite element analysis; semiconductor device measurement; thermal resistance measurement; FEM simulation; bipolar transistor; electro-thermal characteristics; heat spreading; nematic liquid crystal imaging; thermal resistance measurement; Bipolar transistors; Electrical resistance measurement; Electronic packaging thermal management; Heat sinks; Integrated circuit interconnections; Laboratories; Liquid crystal devices; Resistance heating; Temperature sensors; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN
0-7803-7464-9
Type
conf
DOI
10.1109/ICMTS.2002.1193175
Filename
1193175
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