• DocumentCode
    3374113
  • Title

    A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs

  • Author

    Odanaka ; Yamashita, Katsumi ; Koike, Noriki ; Tatsuuma, K.

  • Author_Institution
    Cybermedia Center, Osaka Univ., Japan
  • fYear
    2002
  • fDate
    8-11 April 2002
  • Firstpage
    95
  • Lastpage
    99
  • Abstract
    Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-hν/kTe).
  • Keywords
    MOSFET; hot carriers; photoemission; semiconductor device testing; 0.25 micron; Boltzman distribution; CMOSFET; hot-carrier-induced photoemission; spectrum analysis; test structure; CMOSFETs; Charge coupled devices; Hot carriers; MOSFETs; Optical filters; Optical microscopy; Optical variables control; Photoelectricity; Testing; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
  • Print_ISBN
    0-7803-7464-9
  • Type

    conf

  • DOI
    10.1109/ICMTS.2002.1193178
  • Filename
    1193178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3374113