Title :
3D FinFET and other sub-22nm transistors
Author_Institution :
Dept. of EECS, Univ. of California, Berkeley, CA, USA
Abstract :
FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.
Keywords :
MOSFET; carrier mobility; semiconductor device models; 3D FinFET; UTB-SOI FET; carrier mobility; gate length; near-threshold circuit; scaling path; threshold voltage; Capacitance; FinFETs; Integrated circuits; Logic gates; MOSFET circuits; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306337
