DocumentCode
3374161
Title
3D FinFET and other sub-22nm transistors
Author
Hu, Chenming
Author_Institution
Dept. of EECS, Univ. of California, Berkeley, CA, USA
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
5
Abstract
FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.
Keywords
MOSFET; carrier mobility; semiconductor device models; 3D FinFET; UTB-SOI FET; carrier mobility; gate length; near-threshold circuit; scaling path; threshold voltage; Capacitance; FinFETs; Integrated circuits; Logic gates; MOSFET circuits; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306337
Filename
6306337
Link To Document