Title :
Influence of probing configuration and data set size for bipolar junction capacitance determination
Author :
Macsweeney, D. ; McCarthy, K.G. ; Floyd, L. ; Mathewson, A. ; Hurley, P. ; Power, J.A. ; Kelly, S.C.
Author_Institution :
Cypress Semicond., Cork, Ireland
Abstract :
In this paper, the on-wafer measurement of junction depletion capacitance is examined. This work provides an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure the junction capacitances accurately. The results from this method compare favourably with those extracted using S-parameter measurements. Additionally a method is formulated to determine the minimum number of data points required to maintain extraction accuracy.
Keywords :
S-parameters; bipolar transistors; capacitance measurement; semiconductor device measurement; semiconductor device models; S-parameter measurements; bipolar circuit simulations; bipolar devices; bipolar junction capacitance determination; bootstrap technique; consistent junction capacitance measurement; data set size; extraction accuracy; minimum number of data points; on-wafer measurement; probing configuration; Capacitance measurement; Carbon capture and storage; Cutoff frequency; Educational institutions; Logic circuits; Logic devices; Parasitic capacitance; Propagation delay; Scattering parameters; Testing;
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
DOI :
10.1109/ICMTS.2002.1193184
