DocumentCode :
3374284
Title :
Extraction of the coupling coefficients for the top-floating-gate (TFG) flash EEPROM cell
Author :
McCarthy, Diarmuid ; O´Shea, Mike ; Duane, Russell ; McCarthy, Kevin ; Concannon, Ann ; Mathewson, Alan
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear :
2002
fDate :
8-11 April 2002
Firstpage :
139
Lastpage :
144
Abstract :
A novel measurement technique utilising a new test structure is applied to the existing subthreshold methodology to extract coupling coefficients of the Top-Floating-Gate (TFG) cell. The TFG cell is unique in structure and operation in comparison with current NVM devices. It is designed with the FG surrounding the CG which greatly enhances the gate coupling ratio (αcg) allowing a small area cell and avoiding the use of expensive z-direction extensions unlike the industry standard stacked-gate approach. This work quantifies this benefit for the area efficient TFG cell design.
Keywords :
CMOS memory circuits; flash memories; integrated circuit measurement; integrated circuit testing; 1.5 micron; area efficient TFG cell design; coupling coefficients extraction; coupling ratio; doping schemes; double-poly double-metal 1.5 μm CMOS technology; gate coupling ratio; measurement technique; subthreshold methodology; test structure; top-floating-gate flash EEPROM cell; CMOS logic circuits; CMOS technology; Character generation; EPROM; Logic devices; MOSFETs; Microelectronics; Silicon; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN :
0-7803-7464-9
Type :
conf
DOI :
10.1109/ICMTS.2002.1193186
Filename :
1193186
Link To Document :
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