Test structures for analyzing radiation effects in bipolar technologies

Author

Barnaby, H.J. ; Schrimpf, R.D. ; Galloway, K.F. ; Ball, D.R. ; Pease, R.L. ; Fouillat, Pascal

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

fYear

2002

fDate

8-11 April 2002

Firstpage

197

Lastpage

201

Abstract

Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate terminals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.

Keywords

BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; integrated circuit testing; radiation effects; surface recombination; BJT; BiCMOS test chips; analog bipolar circuits; bipolar technologies; circuit level; device level; discrete bipolar devices; electrical response; gate biasing techniques; independent gate terminals; radiation effects; radiation-induced defects; test structures; BiCMOS integrated circuits; Circuit analysis; Circuit testing; Degradation; Design engineering; Integrated circuit technology; Metallization; Protons; Radiation effects; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on

Print_ISBN

0-7803-7464-9

Type

conf

DOI

10.1109/ICMTS.2002.1193196

Filename

1193196