• DocumentCode
    33746
  • Title

    WAM: Wear wear-out-aware memory management for SCRAM-based low power mobile systems

  • Author

    Dongyoung Seo ; Dongkun Shin

  • Author_Institution
    Dept. of Semicond. Display Eng., Sungkyunkwan Univ., Suwon, South Korea
  • Volume
    59
  • Issue
    4
  • fYear
    2013
  • fDate
    Nov-13
  • Firstpage
    803
  • Lastpage
    810
  • Abstract
    Emerging storage class RAM (SCRAM) devices are power-efficient, byte-addressable, and non-volatile. However, each SCRAM memory cell has a limited lifetime. To use SCRAM to replace power-hungry DRAM in mobile consumer devices, wear-leveling among cells will be a critical issue. Especially, due to the locality of memory access pattern, current operating systems. SCRAM-unaware memory allocator may intensify the wear of certain SCRAM blocks. Wear-leveling requires the redesign of operating systems to distribute memory accesses evenly throughout the entire memory space. This paper suggests two operating-system-level wear-leveling techniques for SCRAM devices. First, this paper proposes a novel memory allocator, called W-Buddy, that considers the wear of memory chunks as it selects a free memory chunk to be allocated. Second, this paper proposes a variable metadata formatting technique for file systems. The experiment results show that the proposed W-Buddy allocator and metadata reformatting technique improve the lifetime of SCRAM devices compared with the techniques of conventional operating systems.
  • Keywords
    low-power electronics; meta data; random-access storage; storage management; SCRAM blocks; SCRAM devices; SCRAM-unaware memory allocator; W-Buddy; WAM; byte-addressable memory cell; current operating systems; file systems; low power mobile systems; memory access pattern; memory chunks; mobile consumer devices; nonvolatile memory cell; power-efficient memory cell; storage class RAM devices; variable metadata formatting technique; wear wear-out-aware memory management; wear-leveling techniques; File systems; Flash memories; Memory management; Operating systems; Phase change random access memory; Resource management;
  • fLanguage
    English
  • Journal_Title
    Consumer Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0098-3063
  • Type

    jour

  • DOI
    10.1109/TCE.2013.6689692
  • Filename
    6689692