Analytical model for high current density trench gate MOSFET

Author

Dharmawardana, K.G.P. ; Amaratunga, G.A.J.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

fYear

1998

fDate

3-6 Jun 1998

Firstpage

351

Lastpage

354

Abstract

An analytical model for the trench gate MOSFET is presented. It consists of a more accurate model for the inversion channel region, which considers the effects of doping variation, transverse and longitudinal electric fields on electron mobility. In addition, it also accurately incorporates the feature of current transfer from the accumulation channel region into the n-drift region. The model presented and validated by numerical simulation results can be useful in the initial design of optimum device structures

Keywords

current density; electric fields; electron mobility; isolation technology; numerical analysis; power MOSFET; power semiconductor switches; semiconductor device models; accumulation channel region; analytical model; current density; current transfer; doping variation effects; electron mobility; inversion channel region model; longitudinal electric fields; n-drift region; numerical simulation; optimum device structure design; transverse electric fields; trench gate MOSFET; trench gate MOSFET model; Analytical models; Current density; Doping profiles; Electron mobility; Gaussian distribution; Low voltage; MOSFET circuits; Numerical simulation; Power MOSFET; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702712

Filename

702712