DocumentCode
3375169
Title
Computer Simulation of Gamma Irradiation Energy Deposition in Mosfet Dosimeters
Author
Stankovic, S.J. ; Ilic, R.D. ; Osmokrovic, P. ; Loncar, B. ; Vasic, A.
Author_Institution
Radiat. Protection Dept., Vinca Inst. of Nucl. Sci., Belgrade
fYear
2005
fDate
13-17 June 2005
Firstpage
1468
Lastpage
1471
Abstract
The application of the MOSFET as detectors or device components in Power Pulse Technique (PPT) requires investigation of their characteristics in the radiation fields. Limitations in measurement of MOSFET detector characteristics are successfully overcomed using Monte Carlo program for simulation of the radiation transport through the detector structure. In this paper the application possibilities of prestige FOTELP and PENELOPE programs for computation of the deposited energy and doze distribution in the sensitive volume of MOSFET were presented.
Keywords
MOSFET; Monte Carlo methods; dosimeters; gamma-rays; MOSFET detector; MOSFET dosimeters; Monte Carlo program; gamma irradiation energy deposition; power pulse technique; Application software; Computer simulation; Distributed computing; Energy measurement; Geometry; MOSFET circuits; Monte Carlo methods; Power MOSFET; Radiation detectors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 2005 IEEE
Conference_Location
Monterey, CA
Print_ISBN
0-7803-9189-6
Electronic_ISBN
0-7803-9190-x
Type
conf
DOI
10.1109/PPC.2005.300699
Filename
4084510
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