DocumentCode
3375185
Title
JTE concept evaluation and failure analysis: OBIC measurements on 4H SiC p+-n diodes
Author
Frischholz, Manfred ; Seidel, Jörg ; Schoner, Adolf ; Gustafsson, Ulf ; Bakowski, Mietek ; Nordgren, Kenneth ; Rottner, Kurt
Author_Institution
IMC, Stockholm, Sweden
fYear
1998
fDate
3-6 Jun 1998
Firstpage
391
Lastpage
394
Abstract
The optical beam induced current (OBIC) technique allows direct imaging of high voltage p-n junctions at a microscopic level under reverse operating conditions by measuring the local variation of the photocurrent. In this paper, we focus on demonstrating two essentially different applications of the OBIC technique: individual failure analysis and evaluation of device concepts by direct verification of the operation of the junction termination extension (JTE) as compared to simulation results
Keywords
OBIC; failure analysis; photoconductivity; power semiconductor diodes; semiconductor device models; semiconductor device testing; semiconductor materials; silicon compounds; 4H SiC p+-n diodes; JTE concept evaluation; OBIC; OBIC measurements; OBIC technique; SiC; device concept evaluation; direct high voltage p-n junction imaging; failure analysis; individual failure analysis; junction termination extension; local photocurrent variation; optical beam induced current; reverse operating conditions; simulation; Current measurement; Diodes; Failure analysis; Optical beams; Optical imaging; Optical microscopy; P-n junctions; Photoconductivity; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location
Kyoto
ISSN
1063-6854
Print_ISBN
0-7803-4752-8
Type
conf
DOI
10.1109/ISPSD.1998.702725
Filename
702725
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