Title :
Low voltage power devices for future VRM
Author :
Huang, Alex Q. ; Sun, Nick X. ; Zhang, Bo ; Zhou, Xunwei ; Lee, F.C.
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
In this paper, a fully depleted LDD MOSFET built on silicon-on-oxide is proposed as a candidate device for future voltage regulator modules (VRM), which are dedicated DC/DC converters to power advanced microprocessors, and which are expected to work at multi-megahertz frequencies
Keywords :
doping profiles; microprocessor chips; modules; power MOSFET; semiconductor device models; silicon-on-insulator; voltage regulators; DC/DC converters; Si-SiO2; fully depleted LDD MOSFET; low voltage power devices; microprocessors; silicon-on-oxide; voltage regulator modules; Capacitance; Capacitors; Frequency; Low voltage; MOSFET circuits; Microprocessors; Power MOSFET; Power electronics; Sun; Topology;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702727
