Title :
Influence of lateral borders length on current voltage characteristics and oscillation efficiency of planar diode
Author :
Prokhorov, E.D. ; Botsula, O.V. ; Reutina, O.A.
Author_Institution :
V.N. Karazin Kharkiv Nat. Univ., Kharkiv, Ukraine
Abstract :
Operation principles of diodes with lateral borders which possess difference mobility have been described earlier. Lateral borders can be represented by tunnel border (TB), resonant-tunnel border (RTB), heteroborder (HB), etc. Diodes with lateral boundaries can be fabricated in a “sandwich” structure, based on n-type semiconductor grown on heavily doped n+ - substrate, or in a planar structure based on n-type semiconductor, grown on semi-insulating (i) substrate.
Keywords :
resonant tunnelling devices; semiconductor diodes; RTB; current voltage characteristic; heteroborder; lateral border length; n-type semiconductor; oscillation efficiency; planar diode; resonant-tunnel border; semiinsulating substrate; Anodes; Cathodes; Oscillators; Resistance; Resonant tunneling devices; Semiconductor diodes; Substrates;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4799-1066-3
DOI :
10.1109/MSMW.2013.6622027
