DocumentCode :
3375334
Title :
Impedance of planar diode with a resonant-tunnel border
Author :
Prokhorov, E.D. ; Botsula, O.V. ; Reutina, O.A.
Author_Institution :
V.N. Karazin Kharkiv Nat. Univ., Kharkiv, Ukraine
fYear :
2013
fDate :
23-28 June 2013
Firstpage :
283
Lastpage :
285
Abstract :
The RTB planar diode shows a negative active impedance component (ReZ <; 0) in the range of wide frequencies. Frequencies corresponding to ReZ → 0 for analyzed microstructures (when S ~ 10-6 cm2), remain within the range up to 100 ... 300 GHz.
Keywords :
resonant tunnelling diodes; RTB planar diode; frequency 100 GHz to 300 GHz; negative active impedance component; planar diode impedance; resonant-tunnel border; Anodes; Cathodes; Impedance; Oscillators; Resistance; Resonant tunneling devices; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4799-1066-3
Type :
conf
DOI :
10.1109/MSMW.2013.6622028
Filename :
6622028
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3375334
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