DocumentCode
3375357
Title
Blue/green semiconductor laser
Author
Nakamura, Shuji
Author_Institution
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
3
Lastpage
4
Abstract
Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength among conventional semiconductor LDs have been developed. The lifetime of green ZnMgSSe based LDs has been improved to be as long as 101 hours.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; 101 hour; InGaN; InGaN MQW LD; ZnMgSSe; blue/green semiconductor laser; green ZnMgSSe based LD; lifetime; shortest emission wavelength; violet InGaN multi-quantum-well structure laser diodes; Current measurement; Diode lasers; Electric variables measurement; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Optical materials; Pulse measurements; Quantum well devices; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553720
Filename
553720
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