Title :
1200 V-trench-IGBT study with square short circuit SOA
Author :
Laska, T. ; Pfirsch, F. ; Hirler, F. ; Niedermey, J. ; Schaffer, C. ; Schmidt, T.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
In this paper, the authors discuss the design of a new 1200 V trench IGBT structure. The combination of well-designed trench cell geometry and a favourably adjusted vertical carrier concentration profile leads to a trench IGBT chip with both low static and dynamic losses and a degree of ruggedness similar to state-of-the-art planar cell nonpunch-through (NPT) IGBTs, especially excellent gate oxide properties, high turn-off capability and a square short circuit safe operating area up to 1200 V
Keywords :
carrier density; dielectric thin films; insulated gate bipolar transistors; isolation technology; losses; power bipolar transistors; semiconductor device reliability; semiconductor device testing; 1200 V; dynamic losses; gate oxide properties; planar cell nonpunch-through IGBTs; square short circuit SOA; square short circuit safe operating area; static losses; trench IGBT; trench IGBT chip; trench IGBT structure; trench cell geometry; turn-off capability; vertical carrier concentration profile; Circuit testing; Insulated gate bipolar transistors; Integrated circuit testing; Latches; Robustness; Semiconductor optical amplifiers; Short circuit currents; Surface waves; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702738
