DocumentCode
3375539
Title
Rate-equation-based VCSEL model and simulation
Author
Shi, Xinzhi ; Qi, Chang ; Wang, Gaofeng ; Hu, Jicheng
Author_Institution
Inst. of Microelectron. & Inf., Wuhan Univ., Wuhan, China
fYear
2009
fDate
19-21 Aug. 2009
Firstpage
503
Lastpage
507
Abstract
Vertical-Cavity Surface-Emitting Lasers (VCSELs) are a new generation of semiconductor lasers that have many advantages. In this paper, we present a comprehensive circuit-level VCSEL model that addresses the basic spatial and thermal behavior of VCSELs based on the rate equations without sacrificing the numerical efficiency demanded by the circuit-level simulation of optoelectronic systems. The model is implemented into SPICE-like simulators, and the simulated results exhibit a good agreements with references.
Keywords
integrated optoelectronics; laser cavity resonators; numerical analysis; semiconductor lasers; surface emitting lasers; SPICE-like simulator; circuit-level simulation; numerical efficiency; optoelectronic systems; rate-equation-based VCSEL model; semiconductor laser; spatial behavior; thermal behavior; vertical-cavity surface-emitting laser; Circuit simulation; Computational modeling; Equations; Laser modes; Optical modulation; Semiconductor lasers; Surface emitting lasers; Thermal lensing; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design and Computer Graphics, 2009. CAD/Graphics '09. 11th IEEE International Conference on
Conference_Location
Huangshan
Print_ISBN
978-1-4244-3699-6
Electronic_ISBN
978-1-4244-3701-6
Type
conf
DOI
10.1109/CADCG.2009.5246853
Filename
5246853
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