Title :
Quantum wire and dot lasers and related technologies
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Unique properties like increased gain, differential gain and relaxation oscillation frequency, reduced threshold current density and T/sub 0/ were predicted and recently demonstrated for quantum wire and dot structures fabricated by in-situ growth methods.
Keywords :
current density; quantum well lasers; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; differential gain; in-situ growth methods; increased gain; quantum dot lasers; quantum wire lasers; reduced threshold current density; related technologies; relaxation oscillation frequency; Laser beam cutting; Laser modes; Optical materials; Quantum dot lasers; Quantum well lasers; Solids; Temperature distribution; Threshold current; US Department of Transportation; Wire;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553721
