A technique for the design of microwave transistor oscillators for optimum power output

Summary form only given. An approach to the design of microwave oscillators is presented which allows both the frequency and power output to be predicted. The main feature of this technique is that it allows the optimum performance to be obtained from the active device. The method overcomes the difficulties associated with one-port techniques, where the passive elements connected to the active device to obtain a negative-impedance one-port are often chosen empirically, which constrains the design and sometimes makes the prespecification of parameters, such as power, impossible. It works better also than design methods using S-parameters, since the last ones are dependent on power levels and bias conditions, so they are not flexible for varied conditions. A design example is given for a 4 GHz MESFET oscillator. The computer-simulated oscillator is developed using the present method and two others, the well-known negative-impedance method and another one using S-parameters, for comparison reasons. The results of the present method were found to be within the predicted values for both frequency and power, without any further optimization