Title : 
19% efficient screen- printed cells using a passivated transparent boron back surface field
         
        
            Author : 
Das, Arnab ; Kim, Dong Seop ; Meemongkolkiat, Vichai ; Rohatgi, Ajeet
         
        
            Author_Institution : 
University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer, Engineering, Georgia Institute of Technology, Atlanta, 30332, U.S.A.
         
        
        
        
        
        
            Abstract : 
Boron back surface field is a promising replacement for the industry standard screen-printed Aluminum. However, the use of boron back surface fields is largely confined to laboratory scale solar cells. In order to increase its industrial applicability, we present a method for achieving a high quality boron back surface field using a cheap and safe boron source and short diffusion time. Metal contacts are fabricated using screen-printing, and degradation of rear passivation after contact firing is minimized through optimized screen-printing of local (point) contacts on the rear. On p-type silicon wafers, this process technology has been utilized to achieve, on 4 cm2 cells, efficiency of up to 19.1% with open-circuit voltage of 650 mV.
         
        
            Keywords : 
Aluminum; Boron; Laboratories; Lithography; Passivation; Photovoltaic cells; Production; Silicon; Temperature; Voltage;
         
        
        
        
            Conference_Titel : 
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
         
        
            Conference_Location : 
San Diego, CA, USA
         
        
        
            Print_ISBN : 
978-1-4244-1640-0
         
        
            Electronic_ISBN : 
0160-8371
         
        
        
            DOI : 
10.1109/PVSC.2008.4922437