Title :
5 W CW diffraction-limited InGaAs flared amplifier at 980 nm
Author :
O´Brien, S. ; Schoenfelder, A. ; Lang, R.J.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
A broad-area flared amplifier has been fabricated which produces 5 W CW at 972 nm in a single-lobed, diffraction-limited far field pattern. A high power, tunable diode laser is used for the injection source with an injected power of /spl sim/115 mW. We believe that the 5 W CW result reported is /spl sim/40% higher power than any reported power for 980 nm flared amplifiers and is the highest diffraction-limited power ever demonstrated from an all-diode source at any wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; light diffraction; optical fabrication; quantum well lasers; 115 mW; 5 W; 5 W CW diffraction-limited InGaAs flared amplifier; 972 to 980 nm; InGaAs; all-diode source; broad-area flared amplifier; diffraction-limited pow; fabrication; high power tunable diode laser; injected power; injection source; quantum well SCH active region; single-lobed diffraction-limited far field pattern; Diffraction; Diode lasers; High power amplifiers; Indium gallium arsenide; Laser beams; Oscillators; Power amplifiers; Power generation; Printing; Tunable circuits and devices;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553724
