DocumentCode
3376453
Title
Impact of the LAD process on CIGS thin films and solar cells
Author
Nakada, Tokio ; Ishii, Yasuyuki ; Hirata, Junya ; Yagioka, Takeshi ; Shirakata, Sho ; Mise, Takahiro
Author_Institution
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 229-8558, Japan
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
4
Abstract
We have developed a Laser-Assisted Deposition (LAD) process for improving the crystalline quality of CIGS thin films and cell performance. The VOC , FF and conversion efficiency improved by the LAD process for all CIGS devices with different Ga content. In particular the Voc improved remarkably for low Ga-content CIGS devices. In fact a high efficiency low-Ga CIGS thin film solar cell was achieved at substrate temperatures of 430 °C. The details of laser power and photon energy dependences of cell performance are also presented.
Keywords
Costs; Etching; Fabrication; Geometry; Gold; Low voltage; Photovoltaic cells; Solid state circuits; Transistors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922467
Filename
4922467
Link To Document