Title :
Effect of reaction temperature on Cu(InGa)(SeS)2 formation by a sequential H2Se/H2S precursor reaction process
Author :
Hanket, Gregory M. ; Kamada, Rui ; Kim, Woo Kyoung ; Shafarman, William N.
Author_Institution :
Institute of Energy Conversion, University of Delaware, Newark, 19716, USA
Abstract :
The effect of sulfization temperature on Ga through-film uniformity in a 2-reaction H2Se/H2S precursor process for Cu(InGa)(SeS)2 was studied. Cu0.8Ga0.2/In bi-layer precursors were prepared by sputter deposition. The precursors were then partially selenized at 450 °C, followed by sulfization at temperatures ranging from 450 to 550 °C. The observed threshold temperature for Ga homogenization during sulfization was ∼500 °C. It is speculated that this threshold temperature possibly derives from a solid→liquid phase transition at 485 °C on the Ga-rich edge of the γ1-Cu9Ga4 phase region.
Keywords :
Costs; Etching; Fabrication; Geometry; Gold; Low voltage; Photovoltaic cells; Solid state circuits; Temperature; Wire;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922470
