• DocumentCode
    3376593
  • Title

    Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile

  • Author

    Chowdhury, Subhra ; Basu, Sukla

  • Author_Institution
    Electron. & Commun. Eng. Dept., Kalyani Gov. Eng. Coll., Kalyani, India
  • fYear
    2011
  • fDate
    14-16 Jan. 2011
  • Firstpage
    242
  • Lastpage
    246
  • Abstract
    InP/InGaAs Heterojunction Bipolar Transistors have increasingly become important due to their high speed performance. Base transit time is an important factor to determine the speed of these devices. An analytical model is developed here to predict the variation of base transit time (τb) and Early voltage (VA) with composition of InGaAs base, as well as with base doping profile. Dependance of band gap on composition is also taken into account in the model.
  • Keywords
    III-V semiconductors; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; InP-InGaAs; band gap; base transit time; early voltage; heterojunction bipolar transistor; nonuniform base doping profile; Indium phosphide; Photonic band gap; Base transit time; Early voltage; InP/InGaAs HBT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Students' Technology Symposium (TechSym), 2011 IEEE
  • Conference_Location
    Kharagpur
  • Print_ISBN
    978-1-4244-8941-1
  • Type

    conf

  • DOI
    10.1109/TECHSYM.2011.5783823
  • Filename
    5783823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3376593