Analysis and simulation of Si/GaAs/GaN MESFET to study the impact of localised charges on device performance

Author

Gautam, Rajni ; Saxena, Manoj ; Gupta, Mridula ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. Of Delhi, New Delhi, India

fYear

2011

fDate

14-16 Jan. 2011

Firstpage

259

Lastpage

264

Abstract

The paper presents a simulation study of effect of interface localised fixed charges on the performance of the Metal Semiconductor Field Effect Transistor (MESFET) for different materials (Si, GaAs and GaN) . The objective of the present work is to study the effect of hot carrier induced fixed charges at the interface of semiconductor and interfacial layer which is always present in any practical metal semiconductor contact. Also the circuit reliability issues of the device are discussed in terms of the performance degradation due to localized interface charges.

Keywords

Schottky gate field effect transistors; elemental semiconductors; gallium arsenide; semiconductor device reliability; silicon; MESFET; Si-GaAs-GaN; circuit reliability; device performance; hot carrier induced fixed charges; interface localised fixed charges; interfacial layer; metal semiconductor contact; metal semiconductor field effect transistor; semiconductor layer; Gallium arsenide; MESFETs; Silicon; ATLAS-3D; barrier height; hot carrier effect; interface traps; interfacial layer; localised charges; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Students' Technology Symposium (TechSym), 2011 IEEE

Conference_Location

Kharagpur

Print_ISBN

978-1-4244-8941-1

Type

conf

DOI

10.1109/TECHSYM.2011.5783826

Filename

5783826