Title :
High-speed modulation characteristics of oxide-apertured vertical-cavity laser
Author :
Thibeault, B.J. ; Bertilsson, K. ; Hegblom, E.R. ; Floyd, P.D. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 μm diameter device. We show that the intrinsic speed is limited to ∼46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.
Keywords :
distributed Bragg reflector lasers; electro-optical modulation; gallium arsenide; indium compounds; laser cavity resonators; oxidation; quantum well lasers; 15.3 GHz; 2.1 mA; 3.1 mum; GHz parasitic limits; InGaAs-GaAs; current device performance; gain compression; high-speed modulation characteristics; intrinsic speed; modulation characteristics; oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers; oxide-apertured vertical-cavity laser; state-of-the-art modulation current efficiency; Bandwidth; Frequency; Optical losses; Optical modulation; Optical scattering; Performance gain; Power generation; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553727
