Title :
A 2.5 milliwatt SOS CMOS receiver for optical interconnect
Author :
Apsel, A. ; Fu, Z.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
We demonstrate a low power, high bit rate, cross coupled differential receiver in silicon on sapphire (SOS) CMOS to be used as part of an inter-chip optical interconnect. The internal amplifier of the transimpedance first stage provides high gain without requiring large, capacitive input gates. The resulting transimpedance stage extends the bandwidth of the differential receiver when small photodetectors are used. We fabricate this receiver in an SOS CMOS process to simplify the packaging of chip-to-chip interconnects with CMOS processors. The total measured power consumption of this receiver is 2.5 mW at gigabit rates, in a 0.5 μm UTSi™ SOS CMOS process.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; integrated optoelectronics; low-power electronics; optical interconnections; optical receivers; photodetectors; sapphire; silicon-on-insulator; 0.5 micron; 2.5 mW; SOS CMOS receiver; Si; UTSi SOS CMOS process; bandwidth extension; capacitive input gate; chip-to-chip interconnect packaging; cross coupled differential receiver; high bit rate differential receiver; interchip optical interconnect; internal amplifier; low power differential receiver; photodetectors; power consumption; silicon on sapphire CMOS; transimpedance stage; Bandwidth; Bit rate; CMOS process; Optical amplifiers; Optical coupling; Optical interconnections; Optical receivers; Packaging; Photodetectors; Silicon;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1329731
