High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics

Author

Palacios, T. ; Calle, F. ; Grajal, J. ; Monroy, E. ; Eickhoff, M. ; Ambacher, O. ; Omnès, F.

Author_Institution

Dpto. Ingenieria Electronica, Univ. Politecnica de Madrid, Spain

Volume

1

fYear

2002

fDate

8-11 Oct. 2002

Firstpage

57

Abstract

In this paper, the technology and properties of surface acoustic wave (SAW) devices on AlN and GaN films are reviewed. The excellent characteristics of these materials for high frequency applications are demonstrated by the fabrication of SAW filters with central frequencies higher than 2.2 GHz. The thermal behavior of these filters has been analyzed. Finally, the integration of a SAW generator with a metal-semiconductor-metal photodetector is described, showing the important synergy resulting from such integration.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; reviews; semiconductor thin films; surface acoustic wave filters; wide band gap semiconductors; 2.2 GHz; AlGaN; AlN; AlN films; GaN; GaN films; SAW device characterization; SAW device fabrication; SAW device/optoelectronics integration; SAW filters; high frequency applications; metal-semiconductor-metal photodetector; review; surface acoustic wave; thermal behavior; Aluminum gallium nitride; Frequency; Gallium nitride; Lithography; Optical device fabrication; Photodetectors; SAW filters; Surface acoustic wave devices; Surface acoustic waves; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-7582-3

Type

conf

DOI

10.1109/ULTSYM.2002.1193352

Filename

1193352