DocumentCode :
3377197
Title :
Epitaxial growth of III–V semiconductor vertical and tilted nanowires on silicon
Author :
Radhakrishnan, Gokul ; Freundlich, Alex ; Charlson, Joe ; Fuhrmann, Bodo
Author_Institution :
Photovoltaics and Naostructrures Laboratories at the Center for Advanced Materials, Houston, TX, USA
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
Here we demonstrate the growth of GaAs and InP nanowires on silicon (111) using gold as the metal seed particle. An ordered array of gold nano dots is integrated on the surface of a silicon substrate using self-assembled polystyrene nanospheres as the Au evaporation template. Growth of the wires is done by chemical beam epitaxy under a vapor phase environment using the Vapor Liquid Solid mechanism. Scanning electron microscopy, photoluminescence and X-ray spectroscopy are used to characterize these nanowires. These nanowires exhibit high crystallinity and good photoluminesce properties stressing their potential for photovoltaic applications.
Keywords :
Chemicals; Epitaxial growth; Gallium arsenide; Gold; Indium phosphide; Nanowires; Self-assembly; Silicon; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922506
Filename :
4922506
Link To Document :
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