DocumentCode :
3377702
Title :
Simulation of a green wafer fab featuring solar photovoltaic technology and storage system
Author :
Sanders, L. ; Lopez, Sebastian ; Guzman, Giovanni ; Jimenez, Joaquin ; Tongdan Jin
Author_Institution :
Ingram Sch. of Eng., Texas State Univ., San Marcos, TX, USA
fYear :
2012
fDate :
9-12 Dec. 2012
Firstpage :
1
Lastpage :
12
Abstract :
A semiconductor wafer fab requires a significant amount of energy to maintain its daily operations. Solar photovoltaics (PV) is a clean and renewable technology that can be potentially used to power large wafer fabs. There exist some critical factors slowing the proliferation of facilities powered by PVs, including high capital costs and power output intermittency. This study investigates the reliability and the costs of operating a PV-based distributed generation (DG) system to generate renewable energy for wafer fabs. In addition to PVs, the DG system also features storage devices and a net metering function. We developed a simulation model to mimic the PV generation and load variability. The goal is to design a reliable and cost-effective PV-based DG system to mitigate carbon emissions. Two case studies are presented in this paper to demonstrate the performance of the proposed DG system for fabs located in Austin Texas, USA, and Dresden, Germany.
Keywords :
environmental factors; photovoltaic power systems; power generation reliability; renewable energy sources; semiconductor industry; wafer bonding; PV generation; PV-based distributed generation; capital cost; carbon emission; green wafer fab; load variability; net metering function; power output intermittency; reliability; renewable technology; semiconductor wafer fab; solar photovoltaic technology; storage device; storage system; Batteries; Electricity; Load modeling; Mathematical model; Meteorology; Semiconductor device modeling; Substations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation Conference (WSC), Proceedings of the 2012 Winter
Conference_Location :
Berlin
ISSN :
0891-7736
Print_ISBN :
978-1-4673-4779-2
Electronic_ISBN :
0891-7736
Type :
conf
DOI :
10.1109/WSC.2012.6465269
Filename :
6465269
Link To Document :
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